In 2025, scientists continue to view SOT-MRAM as the next big innovation that will transform artificial intelligence and beyond.
Scientists have made another significant breakthrough, although we have not yet reached the ultimate goal.
A team of researchers from Johannes Gutenberg University Mainz in Germany has collaborated with Antaios, a French company specializing in magnetic memory, to create a more efficient and environmentally friendly memory technology. This new type of memory, known as SOT-MRAM (spin-orbit torque magnetic random-access memory), promises to reduce energy consumption by 50% while improving efficiency by 30%.
SOT-MRAM presents itself as a promising alternative to conventional static memory due to its lower energy consumption and non-volatile nature. Unlike traditional memories, this system uses electric currents to change magnetic states, allowing for reliable data storage. However, one of the main challenges has been to reduce the high input current required to write data and ensure its compatibility with industrial applications. To address this challenge, the team developed a magnetic material that incorporates ruthenium as an SOT channel, which has significantly improved its performance.
Dr. Rahul Gupta, who was a postdoctoral researcher at the JGU Institute of Physics and the lead author of the study, emphasized that this prototype has the potential to revolutionize data storage and processing. He also highlighted that the technology aligns with global goals to reduce energy consumption and provides faster and more efficient storage solutions.
The team asserts that this technology not only reduces energy consumption but also ensures data retention for over ten years. This advancement is based on the Orbital Hall Effect, which allows for greater energy efficiency without relying on rare or expensive materials. Unlike traditional SOT-MRAM, which requires elements with strong spin-orbit coupling, such as platinum and tungsten, the new method utilizes orbital currents derived from charge currents, thus eliminating the dependence on scarce and costly materials.
The study titled “Harnessing orbital Hall effect in spin-orbit torque MRAM” was published in a reputable scientific journal.
